CHEMICAL ELEMENT DISTRIBUTION OF CADMIUM SULFIDE OBTAINED ON SILICON SUBSTRATE.
Ключевые слова:
injection, current, photodiodes, cadmium.Аннотация
The injection photodiode based on n+CdS-nCdS-nSi and n+CdS-nCdS-pSi structures was created and the distribution of chemical elements of these structures was studied. It was shown that when a cadmium sulfide film is deposited on the silicon surface, an intermediate layer is formed between the silicon and cadmium sulfide, which helps smooth out the difference between the crystal lattice constants of silicon and cadmium sulfide. It was proved by electron Auger spectroscopy that all obtained cadmium sulfide films have n-type conductivity.
Библиографические ссылки
V. V. Osipov and V. I. Stafeev, Sov. Phys. Semicond. 1 (12), 1486 (1967).
V. I. Stafeev, Sov. Phys. Tech. Phys. 3, 1502 (1958).
V.I. Stafeev,V.M. Tuckttvich. Rep. 19th Ann. Conf. Phys. Electr.(MIT, Cambrdge, Massach,1959) v.1, pp. 139.
V. I. Stafeev. Semiconductors. 3, 2513, (1961).
B.M. Garin, V. I. Stafeev. Semiconductors,6, 76, (1972).
I. D. Anisimova, I. M. Vikulin, F. A. Zaitov, Sh. D. Kurmashev, in Semiconductor Photodetectors, Ed. by V. I. Stafeev (Radio i Svyaz’, Moscow, 1984), p. 101 [in Russian].
I. M. Vikulin, Sh. D. Kurmashev, and V. I. Stafeev, Semiconductors 42 (1), 112 (2008).
YU.M Kurbonov, E.B Saitov, and B M Botirov. Analysis of the influence of temperature on the operating mode of a photovoltaic solar station. ICECAE 2020, IOP Conf. Series: Earth and Environmental Science 614 (2020) 012034. DOI: 10.1088/1755-1315/614/1/012034
Shoguchkarov, S., Yuldoshev, I., Saitov, E., Boliev A. The effect of the surface geometry of a photovoltaic battery on its efficiency. E3S Web of Conferences. Volume 216, 14 December 2020 Rudenko International Conference on Methodological Problems in Reliability Study of Large Energy Systems, RSES 2020; Kazan; Russian Federation; 21 September 2020. DOI: 10.1051/e3sconf/202021601149
A. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
Mahdavi, S.M. Optical and structural properties of cupper dopped CdS thin filmsPrepared by pulsed laser deposition [Text] / S.M. Mahdavi, A. Irajizad, A. Azarian, R.M. Tilaki// Scientia Iranica.– 2008.– Vol. 15, № 3.– pp. 360–365.
Patil, L.A. Studies on CdIn2O4 derived from CdIn2S4 prepared by flux method [Text] /L.A. Patil,
M.D. Mahanubhav // Bull. Mater. Sci. – 2007. – Vol. 30, № 2. – pp. 141–146.
Чопра, К. Тонкопленочные солнечные элементы [Текст] : пер. с англ. / К. Чоп-ра, С. Дас. – М. : Мир, 1986. – pp. 435
Change in the quasi-Fermi level and current-Voltage characteristics of diodes with a pn junction under the action of light and deformation G Gulyamov, B Shahobiddinov, A Soliyev, S Nazarov… - AIP Conference Proceedings, 2023
Microwave Effect on the Characteristics of PN Junction Diodes G Gulyamov, B Shahobiddinov, A Soliyev, S Nazarav - Journal of Optoelectronics Laser, 2022
BB, Shakhobiddinov, Majidova GN, and Mukhiddinova FR. "Effect of ultrahigh frequency fields on the photoelectric characteristics of pn conducting semiconductor diodes." Euroasian Journal of Semiconductors Science and Engineering 3.2 (2021): 29-34.
RELATION OF QUASI–LEVEL FERMI OF HOT ELECTRONS AND HOLES WITH THE CURRENT–VOLTAGE CHARACTERISTICS OF THE pn JUNCTION. G Gulyamov, AG Gulyamov, GN Majidova - Scientific and Technical Journal of Namangan Institute …, 2020
CHANGES IN FERMI QUASI LEVELS IN SILICON PN TRANSITIONS UNDER EXPOSURE TO LIGHT AND DEFORMATION AND THEIR INFLUENCE ON VOLT-AMPERE CHARACTERISTICS OF DIODES. G Gulyamov, A Gulyamov, B Shahobiddinov… - Scientific and Technical Journal of Namangan Institute …, 2020
ЯРИМЎТКАЗГИЧЛАРНИНГ ФЕРМИ КВАЗИСАТҲЛАРИНИНГ МИКРОТЎЛҚИНЛИ НУРЛАНИШ ТАЪСИРИДА ЎЗГАРИШИ Г Гулямов, АГ Гулямов, ББ Шахобиддинов… - И ПРИКЛАДНЫЕ ВОПРОСЫ ФИЗИКИ …, 2020
EFFECTS OF DYSULFIDE BONDS ON LYSOZIM PROTEIN STRUCTURE AND PROPERTIES: MOLECULAR LEVEL STUDY AA Abdugapar o'g'li, YK Abdumuttalib o'g'li - Научный Фокус, 2023
The dependence of the electrical conductivity of the longitudinal oscillations of the band gap in narrow-gap semiconductors G Gulyamov, U Erkaboyev, B Shakhobiddinov… - Scientific and Technical Journal of Namangan Institute …, 2019
THE INFLUENCE OF DEFORMATION AND LIGHT ON THE PN-JUNCTION IV CHARACTERISTIC IN AN ELECTROMAGNETIC FIELD G Gulyamov, MG Dadamirzaev, MO Kosimova…
Abdullayev, A., Q. Yo’ldashev, and Z. Bulturova, FIZIKAVIY JARAYONLARNI MOLEKULYAR DINAMIK MODELLASHTIRISH. Research and implementation, 2023.ВЛИЯНИЕ СВЕРХВЫСОКОЧАСТОТНЫХ ПОЛЕЙ НА ФОТОЭЛЕКТРИЧЕСКИЕ ХАРАКТЕРИСТИКИ PN ПРОВОДЯЩИХ ПОЛУПРОВОДНИКОВЫХ ДИОДОВ Г Гулямов, ББ Шахобиддинов, ГН Мажидова…
DETERMINATION OF FRICTION FORCE IN LIQUID AND AIR USING A SPRING PENDULUM
BS Rahimjonovich, YK Abdumutalib o'g'li… - Научный Фокус, 2023
